Dec 10 2005, 08:30 AM
2.6V > 200MHz
2.7V > 209Hz
2.8V > 217MHz
2.9V > 223MHz
still burnin...
any tip guys? 223MHz w/ 2.9V is not so impressive...
Below is my DRAM settings:
Dram Frequency Set (MHz) : 166
Command Per Clock (CPC) : Enabled
CAS Latency Control (Tcl) : 2.0
RAS# to CAS# Delay (Trcd) : 02
Min RAS# active time (Tras) : 05
Row Precharge Time (Trp) : 02
Row Cycle Time (Trc) : 08
Row Refresh cyc time (Trfc) : 17
Row to Row delay (Trrd) : 03
Write Recovery Time (Twr) : 02
Write to Read delay (twtr) : 02
Read to Write delay (Trwt) : 02
Refresh Period (Tref) : 166MHz 1.95us
Write CAS Latency (Twcl) : 01 Bus Clock
DRAM Bank Interleave : N/A
DQS Skew Control : Auto
DQS Skew Value : 0
DRAM Drive Strength : Normal
DRAM Data Strength : 50% reduction
Max Async Latency : 7.0 Nano Seconds
DRAM Response Time : N/A
Read Preamble Time : 5.0 Nano Seconds
IdleCycle Limit : 16 Cycles
Dynamic Counter : Disable
R/W Queue Bypass : 16x
Bypass Max : 07x
32 Byte Granularity : Disable
This post has been edited by ah_khoo: Dec 10 2005, 10:09 AM
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